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Research highlight: "Low-Temperature Atomic Layer Deposition of MoS2 Films" conducted at EPIC, SPID, and KECK-II

Low-Temperature Atomic Layer Deposition of MoS2 Films


Titel Jurca, Michael J. Moody, Alex Henning, Jonathan D. Emery, Binghao Wang, jeffrey M. Tan, Tracy L. Lohr, Lincoln J. Lauhon, and Tobin J. Marks.


Wet chemical screening reveals the very high reactivity of Mo(NMe2)4 with H2S for the low-temperature synthesis of MoS2. This observation motivated an investigation of Mo(NMe2)4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films. Herein we report that Mo(NMe2)4 enables MoS2 film growth at record low temperatures—as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.


Left: AFM topographic images (SPID) of A) as-deposited and B) annealed MoS2 films.
Right: Figure  A outlines the process flow for lift-off. A resist was patterned by either maskless photolithography or electron-beam lithography (EPIC). Next, 10 nm of MoS2 was grown by ALD at 80 °C, and the resist was then removed with the appropriate solvent. Photolithography yields uniform arrays of MoS2 patterns across the ca. 1 cm2 sample (Figure B), showing the reliability of the deposition and patterning processes. Figure C : Optical and AFM micrographs and AFM profile (bottom) of MoS2 letters on Si/Si3N4 patterned by electron-beam lithography.

The full article can be found here.